Hydrostatic pressure dependence of excitonic optical transitions in strained wurtzite GaN/AlN quantum disks
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference44 articles.
1. Ultraviolet GaN Single Quantum Well Laser Diodes
2. Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
3. Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots
4. Measurement of electric field across individual wurtzite GaN quantum dots using electron holography
5. Growth and optical properties of GaN/AlN quantum wells
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical Transitions in Strained Wurtzite GaN Ultrathin Quantum Disk Under Hydrostatic Pressure Effects;Current Nanoscience;2017-10-19
2. Effects of external fields, the hydrostatic pressure and temperature on the electronic Raman scattering of a hydrogenic impurity in a two-dimensional parabolic quantum dot;Superlattices and Microstructures;2015-09
3. Optical rectification coefficient of a two-dimensional parabolic quantum dot: Effects of hydrogenic impurity, external fields, hydrostatic pressure and temperature;Physica B: Condensed Matter;2014-10
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