High performance lateral Schottky diodes based on quasi-degenerated Ga 2 O 3
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/28/3/038503/pdf
Reference34 articles.
1. Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3
2. Hydrogen Sensing Characteristics of Pt Schottky Diodes on () and (010) Ga2O3Single Crystals
3. Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3substrates with crystal defects
4. Electrical Characteristics of Vertical Ni/β-Ga2O3Schottky Barrier Diodes at High Temperatures
5. High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
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1. β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV;Transactions on Electrical and Electronic Materials;2024-04-03
2. Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition;Materials Today Advances;2023-06
3. Insight Into the Leakage Current Transport Mechanism Transformation in β-Ga2O3 SBDs Under Forward Bias Stress;IEEE Transactions on Electron Devices;2023-06
4. Control and understanding of metal contacts to β-Ga2O3 single crystals: a review;SN Applied Sciences;2021-12-18
5. Integration of β-Ga2O3 on Si (100) for Lateral Schottky Barrier Diodes;2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA);2021-11-07
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