Electrical Characteristics of Vertical Ni/β-Ga2O3Schottky Barrier Diodes at High Temperatures-Reference-Cited by-同舟云学术

Electrical Characteristics of Vertical Ni/β-Ga2O3Schottky Barrier Diodes at High Temperatures

Published:2016-09-21 Issue:2 Volume:6 Page:Q3022-Q3025
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Oh Sooyeoun,Yang Gwangseok,Kim Jihyun

Funder

Korea Institue of energy technology Evaluation and planning (KETEP)

LG Innotek-Korea University Nano-photonics Program

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference22 articles.

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4. A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications

5. Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

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