A quantum efficiency analytical model for complementary metal—oxide—semiconductor image pixels with a pinned photodiode structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/12/124215/pdf
Reference17 articles.
1. Robust Intermediate Read-Out for Deep Submicron Technology CMOS Image Sensors
2. A nano-metallic-particles-based CMOS image sensor for DNA detection
3. Identification of Radiation Induced Dark Current Sources in Pinned Photodiode CMOS Image Sensors
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1. Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias;Journal of Nanoelectronics and Optoelectronics;2022-01-01
2. Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor;Chinese Physics B;2018-10
3. Analysis of proton and γ -ray radiation effects on CMOS active pixel sensors;Chinese Physics B;2017-10
4. Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors;Journal of Semiconductors;2016-05
5. Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors;Acta Physica Sinica;2016
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