Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/27/10/104207/pdf
Reference17 articles.
1. Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors
2. Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide–Semiconductor Image Sensors
3. Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects
4. Radiation effects in a CMOS active pixel sensor
5. Radiation-induced dark current in CMOS active pixel sensors
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2. Total ionizing dose effect on graphene field effect transistors;Journal of the Korean Physical Society;2024-05-31
3. Heavy Ion Irradiation Induced Single Particle Displacement Damage in 8T Global Shutter CMOS Image Sensor;Journal of Physics: Conference Series;2021-03-01
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