Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias

Abstract

The experiments of total ionizing dose radiation effects on color CMOS image sensors at different biases were presented. Two bias conditions operated during 60Co γ irradiation, biased and unbiased. In the data processing, the data of four channels were extracted according to the sequence of Bayer array respectively to study the difference between each channel. The full well capacity and dark signal non-uniformity versus the cumulative doses were investigated. After γ-ray irradiation, the full well capacity of the samples decreased along with dark signal non-uniformity increased. Meanwhile, the descending amplitude of full well capacity was different in each channel, but the variation of dark signal non-uniformity was almost consistent. Moreover, the degradations of full well capacity and dark signal non-uniformity were more seriously under-biased.