An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/12/128501/pdf
Reference24 articles.
1. Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film
2. A High-Voltage LDMOS Compatible With High-Voltage Integrated Circuits on p-Type SOI Layer
3. A high-density low on-resistance trench lateral power MOSFET with a trench bottom source contact
4. Dual-gate lateral double-diffused metal—oxide semiconductor with ultra-low specific on-resistance
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1. Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation*;Chinese Physics B;2019-05-01
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