Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO 2 dielectric
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/11/117701/pdf
Reference19 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon
3. Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology
4. Electrical, Structural and Interfacial Characterization of HfO 2 Films on Si Substrates
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