Effects of SiN x on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference14 articles.
1. Trends in power semiconductor devices
2. AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
3. A study on Al 2 O 3 passivation in GaN MOS-HEMT by pulsed stress
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1. AlGaN/GaN HEMT with LPCVD deposited SiN and PECVD deposited SiCOH low-k passivation;Applied Physics Express;2019-02-05
2. Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors;Nanoscale Research Letters;2016-03-10
3. Improved interface properties of an HfO2gate dielectric GaAs MOS device by using SiNxas an interfacial passivation layer;Chinese Physics B;2013-09
4. Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors;Chinese Physics B;2012-12
5. A study of GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as the gate dielectric;Chinese Physics B;2012-01
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