AlGaN/GaN HEMT with LPCVD deposited SiN and PECVD deposited SiCOH low-k passivation
Author:
Funder
Doctoral Scientific Research Start-Up Foundation of Henan Normal University
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab0139/pdf
Reference33 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
3. GaN Power Transistors on Si Substrates for Switching Applications
4. GaN-Based RF Power Devices and Amplifiers
5. Remarkable Reduction of On-Resistance by Ion Implantation in GaN/AlGaN/GaN HEMTs With Low Gate Leakage Current
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1. Vertical sidewall of silicon nitride mask and smooth surface of etched-silicon simultaneously obtained using CHF3/O2 inductively coupled plasma;Vacuum;2023-01
2. Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz;Journal of Semiconductors;2021-12-01
3. Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT;Materials Science in Semiconductor Processing;2021-11
4. Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures;Applied Surface Science;2021-03
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