Mobility enhancement of strained GaSb p-channel metal–oxide–semiconductor field-effect transistors with biaxial compressive strain
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/3/038504/pdf
Reference32 articles.
1. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications
2. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
3. Improved Properties of HfO2/Al2O3/GaSb MOS Capacitors Passivated with Neutralized (NH4)2S Solutions
4. Lattice-Mismatched $\hbox{In}_{0.4}\hbox{Ga}_{0.6} \hbox{As}$ Source/Drain Stressors With In Situ Doping for Strained $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel n-MOSFETs
5. Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH 4 ) 2 S solution
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1. Quantum transport simulation of the two-dimensional GaSb transistors;Journal of Semiconductors;2021-12-01
2. Compressively-strained GaSb nanowires with core-shell heterostructures;Nano Research;2020-06-19
3. Superconductivity and weak anti-localization in GaSb whiskers under strain;Low Temperature Physics;2019-10
4. Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si;APL Materials;2018-01
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