Improved Properties of HfO2/Al2O3/GaSb MOS Capacitors Passivated with Neutralized (NH4)2S Solutions
Author:
Publisher
The Electrochemical Society
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO2/Al2O3 Gate Dielectrics;IEEE Transactions on Electron Devices;2023-10
2. Characteristics of In0.7Ga0.3As MOS Capacitors with Sulfur and Hydrazine Pretreatments;ECS Journal of Solid State Science and Technology;2021-09-01
3. Interface Chemistry and Dielectric Optimization of TMA-Passivated high-k/Ge Gate Stacks by ALD-Driven Laminated Interlayers;ACS Applied Materials & Interfaces;2020-05-08
4. XPS analysis and electrical conduction mechanisms of atomic layer deposition grown Ta2O5 thin films onto p-Si substrates;Journal of Vacuum Science & Technology A;2020-05
5. Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning;Applied Physics Letters;2019-12-02
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