Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/8/088503/pdf
Reference25 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Sputtered ZnO Thin-Film Transistors With Carrier Mobility Over 50 ${\rm cm}^{2}/{\rm Vs}$
3. Top-Gate Staggered a-IGZO TFTs Adopting the Bilayer Gate Insulator for Driving AMOLED
4. Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors
5. Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors
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1. Research of Si-ZnO Thin-Film Transistors Deposited by Atomic Layer Deposition;International Journal of Energy Research;2023-03-07
2. Electromagnetic–Thermo–Mechanical Coupling Behavior of Cu/Si Layered Thin Plate Under Pulsed Magnetic Field;Acta Mechanica Solida Sinica;2021-07-24
3. Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors;Chinese Physics B;2019-08
4. Investigation of Zn 1− x Cd x O films bandgap and Zn 1− x Cd x O/ZnO heterojunctions band offset by x-ray photoelectron spectroscopy;Chinese Physics B;2017-08
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