Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/28/8/087302/pdf
Reference44 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
2. Metal oxide semiconductor thin-film transistors for flexible electronics
3. 35-2: Invited Paper : Field-Coupled Thin-Film Transistors for Emerging Non-Display Applications
4. Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In–Ga–Zn–O Thin-Film Transistors
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