Graphene resistive random memory — the promising memory device in next generation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/3/038501/pdf
Reference128 articles.
1. Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
2. Metal–Oxide RRAM
3. Metal oxide resistive memory switching mechanism based on conductive filament properties
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