Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/27/7/078501/pdf
Reference18 articles.
1. Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells
2. The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate
3. Low Energy Proton SEUs in 32-nm SOI SRAMs at Low Vdd
4. Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM
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