The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/22/10/107104/pdf
Reference25 articles.
1. Considerations for Ultimate CMOS Scaling
2. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
3. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model;Solid-State Electronics;2016-09
2. Reduction of Reactive-Ion Etching-Induced Ge Surface Roughness by SF 6 /CF 4 Cyclic Etching for Ge Fin Fabrication;Chinese Physics Letters;2015-04
3. Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement;Chinese Physics B;2014-10
4. Scattering of particles in wave beam based on series expansion;Chinese Physics B;2014-05-30
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