Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/7/077201/pdf
Reference14 articles.
1. SiC power-switching devices-the second electronics revolution?
2. High-temperature electronics - a role for wide bandgap semiconductors?
3. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions
4. The fabrication and characterization of 4H—SiC power UMOSFETs
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling of high permittivity insulator structure with interface charge by charge compensation;Chinese Physics B;2021-02-01
2. Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C*;Chinese Physics B;2021-02-01
3. Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes;Chinese Physics B;2018-08
4. Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching;Fourth Seminar on Novel Optoelectronic Detection Technology and Application;2018-02-20
5. Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO;Chinese Physics B;2017-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3