Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO-Reference-Cited by-同舟云学术

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Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Published:2017-09 Issue:10 Volume:26 Page:107101
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Shen Zhan-Wei,Zhang Feng,Dimitrijev Sima,Han Ji-Sheng,Yan Guo-Guo,Wen Zheng-Xin,Zhao Wan-Shun,Wang Lei,Liu Xing-Fang,Sun Guo-Sheng,Zeng Yi-Ping

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/26/10/107101/pdf

Reference37 articles.

1. Status and prospects for SiC power MOSFETs

2. Study of runaway electron behaviour during electron cyclotron resonance heating in the HL-2A Tokamak

3. physica status solidi (a)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors;IEEE Transactions on Electron Devices;2024-07

2. Study of Vertical Capacitance in an n-Type 4H-SiC Stepped Thick-Oxide Trench MOS Structure;IEEE Transactions on Electron Devices;2022-08

3. Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode;2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2021-08-25

4. Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC;Applied Physics Letters;2020-09-08

5. Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension*;Chinese Physics B;2019-06-01

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