Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9655996/9655997/09656100.pdf?arnumber=9656100
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1. Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS
2. High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier
3. On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)
4. Low leakage current and high unipolar current density in a 4H-SiC trench gate MOSFET with integrated Schottky barrier diode
5. High performance SiC trench devices with ultra-low Ron;nakamura;IEDM Tech Dig,2011
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1. High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs;2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA);2023-08-18
2. Simulation study on single-event burnout reliability of 4H-SiC trench gate MOSFET with combined P-buried layer;Microelectronics Reliability;2023-03
3. Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET;IEEE Transactions on Power Electronics;2023
4. A Novel 4H-SiC Double Trench MOSFET with Built-In MOS Channel Diode for Improved Switching Performance;Electronics;2022-12-26
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