Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/5/058502/pdf
Reference29 articles.
1. High power and high reliability GaN/InGaN flip-chip light-emitting diodes
2. UV Light-Emitting Diodes at 340 nm Fabricated on a Bulk GaN Substrate
3. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
4. Reduction of efficiency droop in GaInN/GaN light-emitting diodes with thick AlGaN cladding layers
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1. Strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well;Acta Physica Sinica;2024
2. Investigation of emission plane control in GaInN/GaN multiple-quantum shells for efficient nanowire-based LEDs;Nanoscale Advances;2024
3. Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs;ACS Applied Materials & Interfaces;2022-10-27
4. Double superlattice structure for improving the performance of ultraviolet light-emitting diodes;Chinese Physics B;2019-03
5. Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer;Chinese Physics B;2019-01
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