UV Light-Emitting Diodes at 340 nm Fabricated on a Bulk GaN Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/27/8/088105/pdf
Reference11 articles.
1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
2. Ultraviolet light-emitting diodes based on group three nitrides
3. III-nitride ultraviolet light-emitting diodes with delta doping
4. Temperature-dependent electroluminescence of AlGaN-based UV LEDs
5. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
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