The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition-Reference-Cited by-同舟云学术

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The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

Published:2011-12 Issue:12 Volume:20 Page:127306
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Le Ling-Cong,Zhao De-Gang,Wu Liang-Liang,Deng Yi,Jiang De-Sheng,Zhu Jian-Jun,Liu Zong-Shun,Wang Hui,Zhang Shu-Ming,Zhang Bao-Shun,Yang Hui

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference17 articles.

1. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

2. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

3. Time delay in InGaN multiple quantum well laser diodes at room temperature

4. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

5. Electrical properties of n-type vapor-grown gallium nitride

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of optical-thermal coupled model for phosphor-converted LEDs;Frontiers of Optoelectronics;2019-01-22

2. Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers;Semiconductors;2018-05-15

3. Effect of lattice defects on the property of GaN crystal: A molecular dynamics simulation study;Superlattices and Microstructures;2015-12

4. Design of patterned sapphire substrates for GaN-based light-emitting diodes;Chinese Physics B;2015-06

5. Optimization of the parameters for growth high-qulity GaN film by hydride vapor phase epitaxy;Acta Physica Sinica;2013

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