Time delay in InGaN multiple quantum well laser diodes at room temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference17 articles.
1. Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes
2. Influence of patterned TiO 2 /SiO 2 dielectric multilayers for back and front mirror facets on GaN-based laser diodes
3. High-power pure blue laser diodes
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal analysis of GaN-based laser diode mini-array;Chinese Physics B;2018-09
2. Barrier and well thickness designing of InGaN/GaN multiple quantum well for better performances of GaN based laser diode;Acta Physica Sinica;2016
3. Thermal analysis of GaN laser diodes in a package structure;Chinese Physics B;2012-08
4. The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition;Chinese Physics B;2011-12
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