Influence of defects in SiC (0001) on epitaxial graphene
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/8/086501/pdf
Reference31 articles.
1. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
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4. Operation of Graphene Transistors at Gigahertz Frequencies
5. Electronic Confinement and Coherence in Patterned Epitaxial Graphene
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1. Morphological features and nanostructures generated during SiC graphitization process;Chinese Physics B;2023-05-01
2. Direct van deer Waals epitaxy of multiband-emitting InGaN-based LEDs on graphene for phosphor-free white light illumination;Journal of Alloys and Compounds;2022-05
3. A UV-enhanced, self-powered detector with graphene p–n junction grown in situ on SiC(0001) with periodic boron ion modulation;AIP Advances;2021-08-01
4. Controllable growth of P-type graphene on the boron ion-implanted Si-face of SiC (0001);Applied Physics Letters;2019-11-25
5. A new method to characterize underlying scratches on SiC wafers;CrystEngComm;2019
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