A new method to characterize underlying scratches on SiC wafers-Reference-Cited by-同舟云学术

A new method to characterize underlying scratches on SiC wafers

Published:2019 Issue:7 Volume:21 Page:1200-1204
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Zhang Zesheng¹²³⁴⁵,Cai Hao¹²³⁴⁵,Gan Di¹²³⁴⁵,Hu Weijie¹²³⁴⁵,Yang Junwei¹²³⁴⁵,Liu Xiaozhi¹²³⁴⁵,Guo Yunlong¹²³⁴⁵,Guo Liwei¹²³⁴⁵,Wang Wenjun¹²³⁴⁵^ORCID,Chen Xiaolong¹²³⁴⁵^ORCID

Affiliation:

1. Research and Development Center for Functional Crystals

2. Laboratory of Advanced Materials and Electron Microscopy

3. Beijing National Laboratory for Condensed Matter Physics

4. Institute of Physics, Chinese Academy of Sciences

5. Beijing 100190

Abstract

The underlying scratches are revealed after quick irradiation using a picosecond pulsed laser; otherwise, they are unseen under an optical microscope.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C8CE01700J

Reference29 articles.

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4. Influence of defects in SiC (0001) on epitaxial graphene

5. The correlation of epitaxial graphene properties and morphology of SiC (0001)

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