A UV-enhanced, self-powered detector with graphene p–n junction grown in situ on SiC(0001) with periodic boron ion modulation-Reference-Cited by-同舟云学术

A UV-enhanced, self-powered detector with graphene p–n junction grown in situ on SiC(0001) with periodic boron ion modulation

Published:2021-08-01 Issue:8 Volume:11 Page:085124
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Guo Yunlong¹²^ORCID,Guo Liwei¹²³^ORCID,Zhou Kaiyao¹²,Yang Junwei³,Xu Zhi³⁴⁵,Bai Xuedong³⁴⁵

Affiliation:

1. Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2. University of Chinese Academy of Sciences, Beijing 101408, China

3. Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People’s Republic of China

4. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

5. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China

Funder

Foundation for Innovative Research Groups of the National Natural Science Foundation of China

Beijing Science and Technology Planning Project

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0056129

Reference23 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Hall effect mobility of epitaxial graphene grown on silicon carbide

3. Graphene photonics and optoelectronics

4. Graphene photodetectors with ultra-broadband and high responsivity at room temperature

5. State-of-the-Art Graphene High-Frequency Electronics

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