Realizing high zero-bias gain in a GaN-based bipolar phototransistor through thin-base configuration for ultraviolet imaging-Reference-Cited by-同舟云学术

Realizing high zero-bias gain in a GaN-based bipolar phototransistor through thin-base configuration for ultraviolet imaging

Published:2024 Issue: Volume: Page:
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Bingxiang¹²,Jiang Ke¹²^ORCID,Zhang Shanli¹²,Chen Yuxuan¹²,Fang Tong¹²,Xie Zhiwei¹²,Ben Jianwei¹²,Chen Yang¹²^ORCID,Jia Yuping¹²,Liu Mingrui¹²,Sun Xiaojuan¹²^ORCID,Li Dabing¹²

Affiliation:

1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

2. School of Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

A GaN-based ultraviolet bipolar phototransistor with high zero-bias gain is obtained based on an asymmetric n–p–i–n homo-structure. A thin-base structure is proposed to suppress excess holes recombination and, thus, to promote optical gain.

Funder

Natural Science Foundation of Jilin Province

National Natural Science Foundation of China

National Key Research and Development Program of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04301K

Reference86 articles.

1. AlGaN photonics: recent advances in materials and ultraviolet devices

2. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

3. High-speed visible-blind GaN-based indium–tin–oxide Schottky photodiodes

4. High-performance visible-blind GaN-based p-i-n photodetectors

5. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures