Controllable growth of P-type graphene on the boron ion-implanted Si-face of SiC (0001)-Reference-Cited by-同舟云学术

Controllable growth of P-type graphene on the boron ion-implanted Si-face of SiC (0001)

Published:2019-11-25 Issue:22 Volume:115 Page:222102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guo Yunlong¹²,Guo Liwei¹³⁴^ORCID,Yang Junwei¹⁴,Hu Weijie¹²,Chen Hongxiang¹

Affiliation:

1. Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, China

3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

4. Songshan Lake Materials Laboratory Dongguan, Guangdong 523808, China

Funder

Foundation for Innovative Research Groups of the National Natural Science Foundation of China

Beijing Municipal Science and Technology Commission

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5124418

Reference25 articles.

1. Hall effect mobility of epitaxial graphene grown on silicon carbide

2. Graphene photonics and optoelectronics

3. State-of-the-Art Graphene High-Frequency Electronics

4. High-frequency self-aligned graphene transistors with transferred gate stacks

5. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

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