Preparation and electronic properties of abrupt Ge-GaAs(110) interfaces
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/15/i=29/a=020/pdf
Reference36 articles.
1. Experiments on Ge-GaAs heterojunctions
2. Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge Interface
3. Ge–GaAs(110) interface formation
4. Room-temperature formation of the Ag/GaAs (110) interface
5. Electronic properties of the annealed interface between Ag and 7 × 7 Si(111)
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4. Scanning-tunneling-microscopy study of Ge/GaAs(110). II. Coalescence and layer-by-layer growth;Physical Review B;1992-12-15
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