Scanning-tunneling-microscopy study of Ge/GaAs(110). II. Coalescence and layer-by-layer growth
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.15395/fulltext
Reference23 articles.
1. (Invited) Heterostructures for Everything: Device Principle of the 1980's?
2. Combined LEED, AES, and work function studies during the formation of Ge : GaAs(110) heterostructures
3. The electronic structure of Ge:GaAs(110) interfaces
4. Ge–GaAs(110) interface formation
5. Preparation and electronic properties of abrupt Ge-GaAs(110) interfaces
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1. Electronic Structure of Adsorbates on Surfaces. Adsorption on Semiconductors;Electronic Structure;2000
2. Phase separation on solid surfaces: nucleation, coarsening and coalescence kinetics;Thin Solid Films;1999-06
3. Density functional calculation of semiconductor surface phonons;Physics Reports;1999-02
4. Enhanced epitaxial growth on substrates modified by ion sputtering: Ge on GaAs(110);Physical Review B;1996-04-15
5. Electronic, structural, and dynamical properties of the GaAs(110):Ge surface;Physical Review B;1996-04-15
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