Room-temperature formation of the Ag/GaAs (110) interface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/15/i=16/a=020/pdf
Reference17 articles.
1. Electronic properties of the annealed interface between Ag and 7 × 7 Si(111)
2. Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag
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4. Elucidation of surface structure and bonding by photoelectron spectroscopy?
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2. Exploiting the Difference in Lattice Structures for Formation of Self-Assembled PbS Dots on InP(110);Physical Review Letters;2000-11-13
3. Thickness-dependent morphologies of thin Ag films on GaAs(110) as revealed by LEED and STM;Surface Science;1997-04
4. Atomic structure of Ga and As atoms on GaAs(110);Physical Review B;1995-10-15
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