1/f noise and percolation in impurity bands in inversion layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/11/i=23/a=006/pdf
Reference8 articles.
1. Room‐temperature conductivity and location of mobile sodium ions in the thermal silicon dioxide layer of a metal–silicon dioxide–silicon structure
2. Oxide-Charge-Induced Impurity Level in Silicon Inversion Layers
3. Electron scattering in silicon inversion layers by oxide and surface roughness
4. Characterization of low 1/f noise in MOS transistors
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