A deep centre with excited states in MOVPE GaP grown under high phosphorus pressure-Reference-Cited by-同舟云学术

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A deep centre with excited states in MOVPE GaP grown under high phosphorus pressure

Published:1984-12-20 Issue:35 Volume:17 Page:6521-6533
ISSN:0022-3719
Container-title:Journal of Physics C: Solid State Physics
language:
Short-container-title:J. Phys. C: Solid State Phys.

Author:

Yang X -Z,Samuelson L,Grimmeiss H G

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering,Condensed Matter Physics

Link

http://stacks.iop.org/0022-3719/17/i=35/a=019/pdf

Reference21 articles.

1. Absorption Spectrum of Nickel in Gallium Phosphide

2. Compensation mechanism in Ni-diffused n-type GaP

3. Photoluminescence excitation spectroscopy of 3d transition-metal ions in GaP and ZnSe

4. Deep states in transition metal diffused gallium phosphide

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of thin, crystalline oxide, nitride and oxynitride films on metal and metal alloy surfaces;Surface Science Reports;2000-06

2. Preparation and characterization of thin, well‐ordered aluminum oxynitride films on NiAl(001);Journal of Applied Physics;1996-12

3. Elemental steps in the growth of AlN thin films on NiAl upon thermal decomposition of ammonia;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-05

4. Growth of ultra-thin AlN(0001) films on NiAl(111);Solid State Communications;1996-01

5. Chapter 5 Transition Metals in III/V Compounds;Imperfections in III/V Materials;1993

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