Photoluminescence excitation spectroscopy of 3d transition-metal ions in GaP and ZnSe
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/13/i=7/a=018/pdf
Reference17 articles.
1. Crystal-Field Spectra of3dnImpurities in II-VI and III-V Compound Semiconductors
2. Absorption Spectrum of Nickel in Gallium Phosphide
3. Optical absorption dips caused by vibronic antiresonances in ZnSe: Ni and ZnSe:Ti
4. Nickel, a persistent inadvertent contaminant in device-grade vapour epitaxially grown gallium phosphide
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