Preparation and characterization of thin, well‐ordered aluminum oxynitride films on NiAl(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363666
Reference34 articles.
1. Aluminum oxynitride spinel: A review
2. Aluminum Oxynitride Spinel (ALON)–A New Optical and Multimode Window Material
3. Investigations on phase transitions within thin Al2O3 layers on NiAl(001) — HREELS on aluminum oxide films
4. Preparation of a well ordered aluminum oxide layer on NiAl(001)
5. Formation of thin AlN films on NiAl(001) upon thermal decomposition of ammonia
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1. Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report);Pure and Applied Chemistry;2004-01-01
2. Synthesis of epitaxial γAl2O3 thin films by thermal oxidation of AlN/sapphire(0001) thin films;Applied Physics A;2003-10
3. Band gap of amorphous and well-ordered Al2O3 on Ni3Al(100);Applied Physics Letters;2001-06-25
4. Growth of thin, crystalline oxide, nitride and oxynitride films on metal and metal alloy surfaces;Surface Science Reports;2000-06
5. Combined EELS/STM study of the adsorption of nitric oxide and the formation of GaOxNy on CoGa(001);Surface Science;1999-06
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