Deep states in transition metal diffused gallium phosphide-Reference-Cited by-同舟云学术

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Deep states in transition metal diffused gallium phosphide

Published:1981-03 Issue:3 Volume:24 Page:249-256
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Brunwin R.F.,Hamilton B.,Hodgkinson J.,Peaker A.R.,Dean P.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Effects of Deep Centers on n‐Type GaP Schottky Barriers

2. Thermally stimulated current measurements and their correlation with efficiency and degradation in GAP LED'S

3. Deep‐level controlled lifetime and luminescence efficiency in GaP

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1. Manganese as a fast charge carrier trapping center in InP;Physica B: Condensed Matter;2006-06

2. Electrical and Optical Properties of Chromium Doped GaP;physica status solidi (a);2001-02

3. Carrier trapping in iron-doped GaInP;Journal of Applied Physics;1999-01-15

4. High-temperature diode formed by epitaxial GaP layers;Technical Physics Letters;1998-05

5. Poole–Frenkel effect assisted emission from deep donor level in chromium doped GaP;Applied Physics Letters;1998-01-19

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