ELDRS and dose-rate dependence of vertical NPN transistor
Author:
Publisher
IOP Publishing
Subject
Astronomy and Astrophysics,Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Response of advanced bipolar processes to ionizing radiation
2. Enhanced damage in bipolar devices at low dose rates: effects at very low dose rates
3. Total dose effects in conventional bipolar transistors and linear integrated circuits
4. Enhanced low dose rate sensitivity (ELDRS) of linear circuits in a space environment
5. Physical model for enhanced interface-trap formation at low dose rates
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A modified accelerated testing method of ELDRS in extreme-low dose rate irradiation;The European Physical Journal Plus;2020-11
2. Effects of radiation-induced change in 1/f noise and ELDRS of the NPN transistors;Materials Research Innovations;2015-06
3. Annealing behavior of radiation damage in JFET-input operational amplifiers;Journal of Semiconductors;2009-04-29
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