Physical model for enhanced interface-trap formation at low dose rates
Author:
Affiliation:
1. Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx5/23/25186/01134199.pdf?arnumber=1134199
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