Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices-Reference-Cited by-同舟云学术

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Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices

Published:2024-06 Issue:2 Volume:24 Page:225-232
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Mishra Nalin Vilochan¹^ORCID,Medury Aditya Sankar¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, Indian Institute of Science Education and Research, Bhopal, India

Funder

Science and Engineering Research Board

Ministry of Education, India

Ministry of Education through the Prime Minister’s Research Fellowship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7298/10566496/10438719.pdf?arnumber=10438719

Reference34 articles.

1. Effects of radiation and charge trapping on the reliability of high- κ gate dielectrics

2. Radiation Effects in MOS Oxides

3. Radiation Hardness Evaluation of SiC-BGSIT

4. Gas sensors and factors influencing sensing mechanism with a special focus on MOS sensors

5. Bioengineered solar harvesting systems for next generation applications

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