Enhanced damage in bipolar devices at low dose rates: effects at very low dose rates-Reference-Cited by-同舟云学术

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Enhanced damage in bipolar devices at low dose rates: effects at very low dose rates

Published:1996-12 Issue:6 Volume:43 Page:3049-3059
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Johnston A.H.,Lee C.I.,Rax B.G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx1/23/12152/00556904.pdf?arnumber=556904

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