Gate-enclosed NMOS transistors-Reference-Cited by-同舟云学术

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Gate-enclosed NMOS transistors

Published:2011-08 Issue:8 Volume:32 Page:084002
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Fan Xue,Li Ping,Li Wei,Zhang Bin,Xie Xiaodong,Wang Gang,Hu Bin,Zhai Yahong

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Study of N-channel MOSFETs with an enclosed-gate layout in a 0.18 /spl mu/m CMOS technology

2. Radiation-induced edge effects in deep submicron CMOS transistors

3. Application of hardness-by-design methodology to radiation-tolerant ASIC technologies

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Behavioral and Variability Analysis of Enclosed Layout Transistors for Radiation Hardened Analog Circuits;2024 IEEE 25th Latin American Test Symposium (LATS);2024-04-09

2. Aspect Ratio Modeling of Radiation-Hardened 8-Shape Enclosed Layout Transistor;IEEE Transactions on Nuclear Science;2023-08

3. Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing;2023 14th Spanish Conference on Electron Devices (CDE);2023-06-06

4. Study and Analysis of Enclosed Gate FET’s;IOP Conference Series: Materials Science and Engineering;2021-01-01

5. Characterization of Enclosed Layout Transistors for Analog Applications on a130nm Technology;2020 33rd Symposium on Integrated Circuits and Systems Design (SBCCI);2020-08

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