Behavioral and Variability Analysis of Enclosed Layout Transistors for Radiation Hardened Analog Circuits
Author:
Affiliation:
1. Universidade Federal do Rio Grande do Sul,Programa de Pós-Graduação em Microeletrônica -PGMICRO Porto Alegre - RS,Brazil
2. Instituto Federal de Educação,Ciência e Tecnologia Sul-Rio-Grandense,Brazil
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10534343/10534590/10534614.pdf?arnumber=10534614
Reference20 articles.
1. Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs
2. Radiation Effects in MOS Oxides
3. Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses
4. DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments
5. TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses
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