Effect of active layer deposition temperature on the performance of sputtered amorphous In—Ga—Zn—O thin film transistors-Reference-Cited by-同舟云学术

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Effect of active layer deposition temperature on the performance of sputtered amorphous In—Ga—Zn—O thin film transistors

Published:2014-01 Issue:1 Volume:35 Page:014003
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Wu Jie,Shi Junfei,Dong Chengyuan,Zou Zhongfei,Chen Yuting,Zhou Daxiang,Hu Zhe,Zhan Runze

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/35/i=1/a=014003/pdf

Reference20 articles.

1. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

2. Thin film and bulk fabrication of room-temperature-stable electride C12A7:e− utilizing reduced amorphous 12CaO·7Al2O3(C12A7)

3. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor

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1. Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors;Micromachines;2022-11-02

2. Optical and electrical properties of room temperature prepared α-IGZO thin films using an In2Ga2ZnO7 ceramic target;Journal of Central South University;2022-04

3. The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering;Coatings;2021-05-17

4. Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications;Journal of Semiconductors;2021-03-01

5. Analysis of Negative Bias Illumination Stress Induced Effect on LTPS and a-IGZO TFT;ECS Journal of Solid State Science and Technology;2020-11-01

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