An InGaAs graded buffer layer in solar cells-Reference-Cited by-同舟云学术

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An InGaAs graded buffer layer in solar cells

Published:2014-01 Issue:1 Volume:35 Page:014011
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Qu Xiaosheng,Bao Hongyin,Hanieh S. Nikjalal,Xiong Liling,Zhen Hongxin

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/35/i=1/a=014011/pdf

Reference16 articles.

1. Studying of linearly graded buffer layer effect on quality of InGaAs on GaAs substrate

2. Effect of growth temperature on the epitaxy strain relaxation and the tilt of In x Al1−x As graded layer grown by solid-source molecular beam epitaxy

3. Real-Time Structural Analysis of Compositionally Graded InGaAs/GaAs(0 0 1) Layers

4. Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy

5. Reduction of crosshatch roughness and threading dislocation density in metamorphic GaInP buffers and GaInAs solar cells

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors;Electronics;2024-04-02

2. A Comparative Study on AlGaAs and GaAs Tunnel Diodes for Dual Junction Solar Cells;Handbook of Emerging Materials for Semiconductor Industry;2024

3. Dislocation Evolvement in Metamorphic In_0.83Ga_0.17As/InP Photodetectors Through Ex-Situ Rapid Thermal Annealing;IEEE Journal of Quantum Electronics;2022-06

4. Influence of GaInP ordering on the performance of GaInP solar cells;Journal of Semiconductors;2016-07

5. Enhancement of solar cells parameters by periodic nanocylinders;Journal of Semiconductors;2016-06

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