Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy

Published:2013-05 Issue: Volume:370 Page:293-298
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Schulte Kevin L.,Garrod Toby J.,Wan Kim Tae,Kirch Jeremy,Ruder Steven,Mawst Luke J.,Kuech T.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference49 articles.

1. Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures;Dunstan;Applied Physics Letters,1994

2. Lattice tilt and dislocations in compositionally step-graded buffer layers for mismatched InGaAs/GaAs heterointerfaces;Kavanagh;AVS,1992

3. Characterization of metamorphic InxAl1-xAs/GaAs buffer layers using reciprocal space mapping;Lee;Journal of Applied Physics,2007

4. Strain relaxation in graded composition Inx Ga1−x As/GaAs buffer layers;Romanato;Journal of Applied Physics,1999

5. Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers;Kidd;Journal of Crystal Growth,1996

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