Author:
Loke Wan Khai,Tan Kian Hua,Wicaksono Satrio,Yoon Soon Fatt,Owen Man Hon Samuel,Yeo Yee-Chia
Abstract
Abstract
In this study, we investigate the effect of the molecular beam epitaxial growth
temperature on the epilayer tilt and the strain relaxation in the InAlAs
M-buffer layer when the In composition is varied linearly from 6 to 57%
followed by an inverse grading to 52% where InAlAs is lattice-matched to
InP. The samples grown at 420 and 500 °C have final epilayer tilts of
0.66–0.68° about the
axis towards
, whereas the sample grown at 370 °C has a smaller
tilt of 0.15° about the
axis but towards [1 1 0]. Cross-sectional
transmission electron microscopy micrographs showed that the sample grown at
420 °C has the lowest dislocation density
(6 × 106 cm−2) compared
with those grown at 370 and 500 °C. The inversely graded layer in all
samples was shown to be effective in reducing the strain that was accumulated
during the forward graded layer. This resulted in close to fully relaxed
epilayers (92–99%), which are necessary for the prevention of
further occurrence of dislocation nucleation (an important criterion for
subsequent device structure growth).
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
6 articles.
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