Author:
Guo Wei,Han Zhao,Zhao Xiaolong,Xu Guangwei,Long Shibing
Abstract
Abstract
We demonstrate superb large-area vertical β-Ga2O3 SBDs with a Schottky contact area of 1 × 1 mm2 and obtain a high-efficiency DC–DC converter based on the device. The β-Ga2O3 SBD can obtain a forward current of 8 A with a forward voltage of 5 V, and has a reverse breakdown voltage of 612 V. The forward turn-on voltage (V
F) and the on-resistance (R
on) are 1.17 V and 0.46 Ω, respectively. The conversion efficiency of the β-Ga2O3 SBD-based DC–DC converter is 95.81%. This work indicates the great potential of Ga2O3 SBDs and relevant circuits in power electronic applications.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
9 articles.
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