Author:
Li Xiangdong,Geens Karen,Amirifar Nooshin,Zhao Ming,You Shuzhen,Posthuma Niels,Liang Hu,Groeseneken Guido,Decoutere Stefaan
Abstract
Abstract
We demonstrate the key module of comparators in GaN ICs, based on resistor-transistor logic (RTL) on E-mode wafers in this work. The fundamental inverters in the comparator consist of a p-GaN gate HEMT and a 2DEG resistor as the load. The function of the RTL comparators is finally verified by a undervoltage lockout (UVLO) circuit. The compatibility of this circuit with the current p-GaN technology paves the way for integrating logic ICs together with the power devices.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. High-speed, high-reliability GaN power device with integrated gate driver;Tang;Proc ISPSD,2018
2. 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration;Li;IEEE Electron Device Lett,2017
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