A Monolithic GaN LDO Based on 12 V/0.5 μm GaN-on-Si Power Technology Achieving 20 ns Settling Time and 22 MHz UGF-Reference-Cited by-同舟云学术

A Monolithic GaN LDO Based on 12 V/0.5 μm GaN-on-Si Power Technology Achieving 20 ns Settling Time and 22 MHz UGF

Published:2022-10-25 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
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Author:

Wang Peng¹,Jiang Yi-Zhou¹,Liu Dong-Sheng¹,Zhang You¹,Li Wen-Hong¹,Huang Wei¹,Xiao Zhi-Qiang¹,Qiu Yi-Wu²,Zhou Xin-Jie²,Yang Hong-Qiang³,Zhang Wei¹

Affiliation:

1. Fudan University,State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems,School of Microelectronics,Shanghai,China,200433

2. Wuxi Microelectronics Scientific and Research Center,Wuxi,China,214035

3. University of Electronic Science and Technology of China,The State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China,610054

Funder

National Natural Science Foundation of China

Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963471.pdf?arnumber=9963471

Reference5 articles.

1. High-Gain Wide-Bandwidth Capacitor-Less Low-Dropout Regulator (LDO) for Mobile Applications Utilizing Frequency Response of Multiple Feedback Loops

2. A Fast-Response NMOS-LDO Voltage Regulator without on-chip Compensated Capacitor

3. An NMOS-LDO Regulated Switched-Capacitor DC–DC Converter With Fast-Response Adaptive-Phase Digital Control

4. Integration of GaN analog building blocks on p-GaN wafers for GaN ICs

5. A Monolithic GaN-IC With Integrated Control Loop for 400-V Offline Buck Operation Achieving 95.6% Peak Efficiency

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